MOSFET 2N-CH 30V 8A 8-SOIC STS8DNH3LL
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Description:
MOSFET 2N-CH 30V 8A 8-SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Vgs (th) (maximum) for different Ids
8-SOIC(0.154,3.90mm wide)
DataSheet
STS8DNH3LL（FET, MOSFET）BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory26192,Price reference "real-time change" China/Hongkong。 STS8DNH3LL package/specs, Download STS8DNH3LL、Datasheet。
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